HgCdTe（MCT）多通道檢測(cè)模塊

VIGO Photonics 提供針對(duì)不同波長(zhǎng)的四象限和多元線陣探測(cè)器模塊，基于HgCdTe材料，集成了跨阻抗、直流耦合四通道前置放大器、TE制冷和風(fēng)扇。四象限模塊適合用于測(cè)量光束的移動(dòng)或作為對(duì)準(zhǔn)系統(tǒng)的反饋；多元線陣探測(cè)器多用于非接觸式的溫度測(cè)量，常用于鐵路運(yùn)輸。除標(biāo)準(zhǔn)5μm和10.6μm模塊，根據(jù)不同應(yīng)場(chǎng)景，可接受定制。

四象限模塊

1、QM-5，四象限，制冷模塊，光敏面4×(0.2×0.2)

Specification (Ta = 20°C)
Parameter Typical value
Optical characteristics
Cut-on wavelength λcut-on (10%), μm 3.5±0.5
Peak wavelength λpeak, μm 4.5±0.5
Optimum wavelength λopt, μm 5
Cut-off wavelength λcut-off (10%), μm 6.0±0.5
Detectivity D*(λpeak), cm·Hz1/2/W ≥7.0×109
Detectivity D*(λopt), cm·Hz1/2/W ≥6.8×109
Output noise density vn(100 kHz), nV/Hz1/2 ≤500
Electrical parameters
Voltage responsivity Rv(λpeak, RL = 1 MΩ*)), V/W ≥1.7×105
Voltage responsivity Rv(λopt, RL = 1 MΩ*)), V/W ≥1.6×105
Low cut-off frequency flo, Hz DC
High cut-off frequency fhi, Hz ≥1M
Output impedance Rout, Ω 50
Output voltage swing Vout (RL = 1 MΩ*)), V 0 – 4
Output voltage offset Voff, mV max ±20
Power supply voltage Vsup, VDC 7.5
Power consumption, W max 6
Other information
Active elements material epitaxial HgCdTe heterostructure
Active areas A, mm×mm 4×(0.2×0.2)
Distance between active elements, mm 0.02
Window pSiAR
Acceptance angle Φ ~70°
Ambient operating temperature Ta, °C 10 to 30
Signal output sockets 4×MCX
Power supply socket DC 2.1/5.5
Mounting hole M4
Fan yes

2、QM-10.6，四象限，非制冷模塊，光敏面4×(1×1)

Specification (Ta = 20°C)
Parameter Typical value
Optical characteristics
Cut-on wavelength λcut-on (10%), μm 3.0±1.0
Peak wavelength λpeak, μm 8.0±2.0
Optimum wavelength λopt, μm 10.6
Cut-off wavelength λcut-off (10%), μm 12.0±1.0
Detectivity D*(λpeak), cm·Hz1/2/W ≥1.0×107
Detectivity D*(λopt), cm·Hz1/2/W ≥4.5×106
Output noise density vn(100 kHz) μV/Hz1/2 ≤4.5
Electrical parameters
Voltage responsivity Rv(λpeak, RL = 1 MΩ*)), V/W ≥2.2×102
Voltage responsivity Rv(λopt, RL = 1 MΩ*)), V/W ≥1.1×102
Low cut-off frequency flo, Hz DC
High cut-off frequency fhi, Hz ≥1M
Output impedance Rout, Ω 50
Output voltage swing Vout(RL = 1 MΩ*)), V 0 – 4
Output voltage offset Voff, mV max ±20
Power supply voltage Vsup, VDC 7.5
Power consumption, W max 6
Other information
Active elements material epitaxial HgCdTe heterostructure
Active areas A, mm×mm 4×(1×1)
Distance between active elements, mm 0.15±0.1
Window none
Acceptance angle Φ ~70°
Ambient operating temperature Ta, °C 10 to 30
Signal output sockets 4×MCX
Power supply socket DC 2.1/5.5
Mounting hole M4
Fan yes

 

多元線陣模塊

1、4EM-5，1×4線陣，制冷模塊，光敏面4×(0.2×0.2)

Specification (Ta = 20°C)
Parameter Typical value
Optical characteristics
Cut-on wavelength λcut-on (10%), μm 3.5±0.5
Peak wavelength λpeak, μm 4.5±0.5
Optimum wavelength λopt, μm 5
Cut-off wavelength λcut-off (10%), μm 6.0±0.5
Detectivity D*(λpeak), cm·Hz1/2/W ≥7.0×109
Detectivity D*(λopt), cm·Hz1/2/W ≥6.8×109
Output noise density vn(100 kHz), nV/Hz1/2 ≤500
Electrical parameters
Voltage responsivity Rv(λpeak, RL = 1 MΩ*)), V/W ≥1.7×105
Voltage responsivity Rv(λopt, RL = 1 MΩ*)), V/W ≥1.6×105
Low cut-off frequency flo, Hz DC
High cut-off frequency fhi, Hz ≥1M
Output impedance Rout, Ω 50
Output voltage swing Vout (RL = 1 MΩ*)), V 0 – 4
Output voltage offset Voff, mV max ±20
Power supply voltage Vsup, VDC 7.5
Power consumption, W max 6
Other information
Active elements material epitaxial HgCdTe heterostructure
Active areas A, mm×mm 4×(0.2×0.2)
Distance between active elements, mm 0.05
Window pSiAR
Acceptance angle Φ ~70°
Ambient operating temperature Ta, °C 10 to 30
Signal output sockets 4×MCX
Power supply socket DC 2.1/5.5
Mounting hole M4
Fan yes

2、4EM-5，1×32線陣，制冷模塊，光敏面4×(0.2×0.2)

Specification (Ta = 20°C, Vb = 0 mV) Detection module type
Parameter
32EM-5-01 32EM-5-02
Optical characteristics
Cut-on wavelength λcut-on (10%), μm ≤2.0 3.7±0.2
Peak wavelength λpeak, μm 4.25±0.2 4.75±0.2
Optimal wavelength λopt, μm 5 5
Cut-off wavelength λcut-off (10%), μm 5.6±0.2 5.8±0.2
Detectivity D*(λpeak), cm·Hz1/2/W ≥3.5×109 ≥2.4×109
Detectivity D*(λopt), cm·Hz1/2/W ≥2.2×109 ≥2.2×109
Electrical parameters
Voltage responsivity Rv(λpeak, RLoad = 1 MΩ), V/W ≥3.5×104 ≥5.0×104
Voltage responsivity Rv(λopt, RLoad = 1 MΩ), V/W ≥2.2×104 ≥4.6×104
Low cut-off frequency flo, Hz DC DC
High cut-off frequency fhi, kHz ≥400 ≥650
Output impedance Rout, Ω 50 50
Output voltage swing Vout (RLoad = 1 MΩ), V -1
(negative output)		 -1
(negative output)
Output voltage offset Voff, mVDC max -200 max -200
Power supply voltage Vsup, VDC 5 5
Other information
Active elements material epitaxial HgCdTe heterostructure
Number of elements 1×32 linear array
Active area of single element A, mm×mm 0.125×1 0.1×0.1
Distance between active elements, μm 25 50
Window pAl2O3AR
Acceptance angle Φ ~70°
Ambient operating temperature Ta, °C 10 to 30

應(yīng)用領(lǐng)域

  • CO2激光（10.6μm）測(cè)量
  • 激光功率監(jiān)控，激光束輪廓和定位
  • 激光校準(zhǔn)
  • 光譜學(xué)（氣體檢測(cè)，呼吸分析）
  • 慢速和快速非接觸式溫度測(cè)量（鐵路運(yùn)輸、工業(yè)和實(shí)驗(yàn)室過(guò)程監(jiān)控）
  • 光學(xué)分揀系統(tǒng)
  • 激光束輪廓和定位
  • 火焰和爆炸檢測(cè)
  • 國(guó)防和安全
  • 燃燒過(guò)程控制